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29.045 : Semiconducting materials

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  • IEC 62899-203 (2018-09)

    IEC 62899-203:2018 Printed electronics - Part 203: Materials - Semiconductor ink
    9/28/2018 - PDF - English - CEI
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    €154.00

  • DIN 50451-7:2018-04

    Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 7: Determination of 31 elements in high-purity hydrochloric acid by ICP-MS
    4/1/2018 - PDF - German - DIN
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    €61.70

  • DIN SPEC 1994:2017-02

    Testing of materials for semiconductor technology - Determination of anions in weak acids
    2/1/2017 - PDF - German - DIN
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    €43.90

  • NF C96-050-25, NF EN 62047-25 (12/2016)

    Semiconductor devices - Micro-electromechanical devices - Part 25 : silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area
    12/30/2016 - PDF - French - UTE
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    €86.53

  • NF C96-050-25, NF EN 62047-25 (12/2016)

    Semiconductor devices - Micro-electromechanical devices - Part 25 : silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area
    12/30/2016 - PDF - English - UTE
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    €86.53

  • ASTM F980-16

    Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
    12/1/2016 - PDF - English - ASTM
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    €41.00

  • ASTM F980-16 + Redline

    Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
    12/1/2016 - PDF - English - ASTM
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    €49.00

  • NF C96-050-26, NF EN 62047-26 (06/2016)

    Semiconductor devices - Micro-electromechanical devices - Part 26 : description and measurement methods for micro trench and needle structures
    6/25/2016 - PDF - French - UTE
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    €97.45

  • NF C96-050-22, NF EN 62047-22 (12/2014)

    Semiconductor devices - Micro-electromechanical devices - Part 22 : electromechanical tensile test method for conductive thin films on flexible substrates
    12/26/2014 - PDF - French - UTE
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    €60.25

  • DIN 50451-3:2014-11

    Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 3: Determination of 31 elements in high-purity nitric acid by ICP-MS
    11/1/2014 - PDF - German - DIN
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    €75.40

  • DIN 50451-6:2014-11

    Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 6: Determination of 36 elements in a high-purity ammonium fluoride solution (NH4F) and in etching mixtures of high-purity ammonium fluoride solution containing hydrofluoric acid
    11/1/2014 - PDF - German - DIN
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    €61.70

  • NF C96-050-11, NF EN 62047-11 (03/2014)

    Semiconductor devices - Micro-electromechanical devices - Part 11 : test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems
    3/12/2014 - PDF - French - UTE
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    €86.53

  • NF C96-050-18, NF EN 62047-18 (02/2014)

    Semiconductor devices - Micro-electromechanical devices - Part 18 : bend testing methods of thin film materials
    2/28/2014 - PDF - French - UTE
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    €73.94

  • EIA JESD 88E:2013

    JEDEC Dictionary of Terms for Solid-State Technology
    6/1/2013 - PDF sécurisé - English - EIA
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    €130.50

  • ASTM D6095-12 + Redline

    Standard Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
    11/1/2012 - PDF - English - ASTM
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    €43.00

  • ASTM D6095-12

    Standard Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
    11/1/2012 - PDF - English - ASTM
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    €36.00

  • NF C96-050-9, NF EN 62047-9 (04/2012)

    Semiconductor devices - Micro-electromechanical devices - Part 9 : wafer to wafer bonding strength measurement for MEMS
    4/1/2012 - PDF - French - UTE
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    €86.53

  • ASTM E1438-11 + Redline

    Standard Guide for Measuring Widths of Interfaces in Sputter Depth Profiling Using SIMS
    11/1/2011 - PDF - English - ASTM
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    €43.00

  • ASTM E1438-11

    Standard Guide for Measuring Widths of Interfaces in Sputter Depth Profiling Using SIMS
    11/1/2011 - PDF - English - ASTM
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    €36.00

  • NF C96-050-4, NF EN 62047-4 (09/2011)

    Semiconductor devices - Micro-electromechanical devices - Part 4 : generic specifications for MEMS
    9/1/2011 - PDF - French - UTE
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    €86.53

  • EIA JESD 221:2011

    Alpha Radiation Measurement in Electronic Materials
    5/1/2011 - PDF sécurisé - English - EIA
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    €64.38

  • PD IEC/TR 60146-1-2:2011

    Semiconductor converters. General requirements and line commutated converters. Application guide
    2/28/2011 - Paper - English - BSI
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    €289.56

  • IEC/TR 60146-1-2 (2011-01)

    IEC TR 60146-1-2:2011 Semiconductor converters - General requirements and line commutated converters - Part 1-2: Application guide
    1/26/2011 - PDF - English - CEI
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    €330.00

  • NF C96-050-6, NF EN 62047-6 (09/2010)

    Semiconductor devices - Micro-electromechanical devices - Part 6 : axial fatigue testing methods of thin film materials
    9/1/2010 - PDF - French - UTE
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    €73.94

  • BS EN 60146-1-1:2010

    Semiconductor converters. General requirements and line commutated converters. Specification of basic requirements
    8/31/2010 - Paper - English - BSI
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    €289.56

  • DIN 50451-5:2010-03

    Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 5: Guideline for the selection of materials and testing of their suitability for apparatus for sampling and sample preparation for the determination of trace elements in the range of micrograms per kilogram and nanograms per kilogram
    3/1/2010 - PDF - German - DIN
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    €54.80

  • DIN 50455-1:2009-10

    Testing of materials for semiconductor technology - Methods for characterizing photoresists - Part 1: Determination of coating thickness with optical methods
    10/1/2009 - PDF - German - DIN
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    €40.80

  • DIN 50452-2:2009-10

    Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 2: Determination of particles by optical particle counters
    10/1/2009 - PDF - German - DIN
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    €54.80

  • IEC 60146-1-1 (2009-06)

    IEC 60146-1-1:2009 Semiconductor converters - General requirements and line commutated converters - Part 1-1: Specification of basic requirements
    6/29/2009 - PDF - English, French - CEI
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    €352.00

  • ASTM F76-08 + Redline

    Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors
    6/15/2008 - PDF - English - ASTM
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    €54.00

  • ASTM F76-08(2016)e1

    Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors
    6/15/2008 - PDF - English - ASTM
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    €46.00

  • ASTM D3004-08(2013)

    Standard Specification for Crosslinked and Thermoplastic Extruded Semi-Conducting, Conductor and Insulation Shielding Materials
    5/1/2008 - PDF - English - ASTM
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    €35.00

  • ASTM D3004-08(2013)

    Standard Specification for Crosslinked and Thermoplastic Extruded Semi-Conducting, Conductor and Insulation Shielding Materials
    5/1/2008 - PDF - English - ASTM
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    €36.00

  • DIN 50451-4:2007-02

    Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 4: Determination of 34 elements in ultra pure water by mass spectrometry with inductively coupled plasma (ICP-MS)
    2/1/2007 - PDF - German - DIN
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    €61.70

  • NF C96-050-2, NF EN 62047-2 (11/2006)

    Semiconductor devices - Micro-electromechanical devices - Part 2 : tensile testing methods of thin film materials
    11/1/2006 - PDF - French - UTE
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    €73.94

  • NF C96-050-3, NF EN 62047-3 (11/2006)

    Semiconductor devices - Micro-electromechanical devices - Part 3 : thin film standard test piece for tensile testing
    11/1/2006 - PDF - French - UTE
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    €60.25

  • BS EN 62226-2-1:2005

    Exposure to electric or magnetic fields in the low and intermediate frequency range. Methods for calculating the current density and internal electric field induced in the human body. Exposure to magnetic fields. 2D models
    2/11/2005 - Paper - English - BSI
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    €271.32

  • DIN 50450-9:2003-04

    Testing of materials for semiconductor technology - Determination of impurities in carrier gases and dopant gases - Part 9: Determination of oxygen, nitrogen, carbonmonoxide, carbondioxide, hydrogen and C1-C3-hydrocarbons in gaseous hydrogen chloride by gaschromatography
    4/1/2003 - PDF - German - DIN
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    €33.60

  • DIN 50451-1:2003-04

    Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 1: Silver (Ag), gold (Au), calcium (Ca), copper (Cu), iron (Fe), potassium (K) and sodium (Na) in nitric acid by AAS
    4/1/2003 - PDF - German - DIN
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    €40.80

  • DIN 50451-1:2003-04

    Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 1: Silver (Ag), gold (Au), calcium (Ca), copper (Cu), iron (Fe), potassium (K) and sodium (Na) in nitric acid by AAS
    4/1/2003 - PDF - English - DIN
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    €51.00

  • DIN 50451-2:2003-04

    Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 2: Calcium (Ca), cobalt (Co), chromium (Cr), copper (Cu), Iron (Fe), nickel (Ni) and zinc (Zn) in hydrofluoric acid with plasma-induced emission spectroscopy
    4/1/2003 - PDF - German - DIN
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    €40.80

  • DIN 50451-2:2003-04

    Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 2: Calcium (Ca), cobalt (Co), chromium (Cr), copper (Cu), Iron (Fe), nickel (Ni) and zinc (Zn) in hydrofluoric acid with plasma-induced emission spectroscopy
    4/1/2003 - PDF - English - DIN
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    €51.00

  • JIS R 1650-1:2002

    Testing method for fine ceramics thermoelectric materials Part 1: Thermoelectric power
    3/20/2002 - PDF - Japanese - JSA
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    €25.00

  • JIS R 1650-2:2002

    Testing method for fine ceramics thermoelectric materials Part 2: Resistivity
    3/20/2002 - PDF - Japanese - JSA
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    €25.00

  • JIS R 1650-3:2002

    Method for measurement of fine ceramics thermoelectric materials Part 3: Thermal diffusivity, specific heat capacity, and thermal conductivity
    3/20/2002 - PDF - Japanese - JSA
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    €25.00

  • JIS R 1651:2002

    Method for measurement of pyroelectric coefficient of fine ceramics
    3/20/2002 - PDF - Japanese - JSA
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    €25.00

  • JIS R 1801:2002

    Method of measuring spectral emissivity of ceramic radiating materials for infrared heaters by using FTIR
    3/20/2002 - PDF - Japanese - JSA
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    €25.00

  • ASTM F2113-01(2011)

    Standard Guide for Analysis and Reporting the Impurity Content and Grade of High Purity Metallic Sputtering Targets for Electronic Thin Film Applications
    6/10/2001 - PDF - English - ASTM
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    €36.00

  • DIN 50455-2:1999-11

    Testing of materials for semiconductor technology - Methods for the characterisation photoresists - Part 2: Determination of photosensitivity of positive photoresists
    11/1/1999 - PDF - German - DIN
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    €33.60

  • DIN 50455-2:1999-11

    Testing of materials for semiconductor technology - Methods for the characterisation photoresists - Part 2: Determination of photosensitivity of positive photoresists
    11/1/1999 - PDF - English - DIN
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    €42.00

  • ASTM F1894-98(2011)

    Test Method for Quantifying Tungsten Silicide Semiconductor Process Films for Composition and Thickness
    5/10/1998 - PDF - English - ASTM
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    €41.00

  • JIS H 0614:1996

    Visual inspection for silicon wafers with specular surfaces
    1/1/1996 - PDF - Japanese - JSA
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    €25.00

  • DIN 50452-1:1995-11

    Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 1: Microscopic determination of particles
    11/1/1995 - PDF - German - DIN
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    €33.60

  • DIN 50452-1:1995-11

    Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 1: Microscopic determination of particles
    11/1/1995 - PDF - English - DIN
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    €42.00

  • JIS H 0602:1995

    Testing method of resistivity for silicon crystals and silicon wafers with four-point probe
    11/1/1995 - PDF - Japanese - JSA
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    €25.00

  • DIN 50452-3:1995-10

    Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 3: Calibration of optical particle counters
    10/1/1995 - PDF - German - DIN
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    €40.80

  • DIN 50452-3:1995-10

    Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 3: Calibration of optical particle counters
    10/1/1995 - PDF - English - DIN
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    €51.00

  • JIS H 0604:1995

    Measuring of minority-carrier lifetime in silicon single crystal by photoconductive decay method
    7/1/1995 - PDF - Japanese - JSA
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    €25.00

  • ASTM F615M-95(2013)

    Standard Practice for Determining Safe Current Pulse-Operating Regions for Metallization on Semiconductor Components (Metric)
    5/15/1995 - PDF - English - ASTM
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    €41.00

  • JIS H 0611:1994

    Methods of measurement of thickness, thickness variation and bow for silicon wafer
    1/1/1994 - PDF - Japanese - JSA
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    €25.00

  • DIN 50450-4:1993-09

    Testing of materials for semiconductor technology; determination of impurities in carrier gases and dopant gases; determination of C1-C3-hydrocarbons in nitrogen by gas-chromatography
    9/1/1993 - PDF - German - DIN
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    €33.60

  • IEC 60146-1-3 (1991-04)

    IEC 60146-1-3:1991 Semiconductor convertors - General requirements and line commutated convertors - Part 1-3: Transformers and reactors
    4/15/1991 - PDF - English, French - CEI
    Learn More
    €77.00

  • DIN 50450-2:1991-03

    Testing of materials for semiconductor technology; determination of impurities in carrier gases and doping gases; determination of oxygen impurity in N2, Ar, He, Ne and H2 by using a galvanic cell
    3/1/1991 - PDF - German - DIN
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    €33.60

  • DIN 50450-2:1991-03

    Testing of materials for semiconductor technology; determination of impurities in carrier gases and doping gases; determination of oxygen impurity in N2, Ar, He, Ne and H2 by using a galvanic cell
    3/1/1991 - PDF - English - DIN
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    €33.60

  • DIN 50450-3:1991-03

    Testing of materials for semiconductor technology; determination of impurities in carrier gases and doping gases; determination of methane impurity in H2, O2, N2, Ar and He by using a flame ionization detector (FID)
    3/1/1991 - PDF - German - DIN
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    €33.60

  • DIN 50450-3:1991-03

    Testing of materials for semiconductor technology; determination of impurities in carrier gases and doping gases; determination of methane impurity in H2, O2, N2, Ar and He by using a flame ionization detector (FID)
    3/1/1991 - PDF - English - DIN
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    €33.60

  • DIN 50453-1:1990-10

    Testing of materials for semiconductor technology; determination of etch rates of etching mixtures; silicium monocrystals; gravimetric method
    10/1/1990 - PDF - German - DIN
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    €33.60

  • DIN 50453-1:1990-10

    Testing of materials for semiconductor technology; determination of etch rates of etching mixtures; silicium monocrystals; gravimetric method
    10/1/1990 - PDF - English - DIN
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    €42.00

  • DIN 50453-2:1990-10

    Testing of materials for semiconductor technology; determination of etch rates of etching mixtures; silicium-dioxid coating; optical method
    10/1/1990 - PDF - German - DIN
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    €33.60

  • DIN 50453-2:1990-10

    Testing of materials for semiconductor technology; determination of etch rates of etching mixtures; silicium-dioxid coating; optical method
    10/1/1990 - PDF - English - DIN
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    €42.00

  • DIN 50450-1:1987-08

    Testing of materials for semiconductor technology; determination of impurities in carrier gases and doping gases; determination of water impurity in hydrogen, oxygen, nitrogen, argon and helium by using a diphosphorus pentoxide cell
    8/1/1987 - PDF - German - DIN
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    €33.60

  • DIN 50450-1:1987-08

    Testing of materials for semiconductor technology; determination of impurities in carrier gases and doping gases; determination of water impurity in hydrogen, oxygen, nitrogen, argon and helium by using a diphosphorus pentoxide cell
    8/1/1987 - PDF - English - DIN
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    €33.60

  • DIN 1715-1:1983-11

    Thermostat metals; technical delivery conditions
    11/1/1983 - PDF - German - DIN
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    €47.60

  • DIN 1715-1:1983-11

    Thermostat metals; technical delivery conditions
    11/1/1983 - PDF - English - DIN
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    €59.60

  • DIN 1715-2:1983-11

    Thermostat metals; testing the specific thermal curvature
    11/1/1983 - PDF - German - DIN
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    €33.60

  • DIN 1715-2:1983-11

    Thermostat metals; testing the specific thermal curvature
    11/1/1983 - PDF - English - DIN
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    €42.00

  • JIS H 0603:1978

    Measurement of minority carrier life time in germanium by photoconductive decay method
    3/1/1978 - PDF - Japanese - JSA
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    €25.00

  • JIS H 0607:1978

    Determination of conductivity type in germanium by thermoelectromotive method
    3/1/1978 - PDF - Japanese - JSA
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    €25.00

  • JIS H 0613:1978

    Visual inspection for sliced and lapped silicon wafers
    1/1/1978 - PDF - Japanese - JSA
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    €25.00

  • JIS H 0610:1966

    Method of measurement of etch pit density of germanium crystal
    12/1/1966 - PDF - Japanese - JSA
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    €25.00

  • JIS H 0601:1962

    Testing methods of resistivity for germanium
    6/1/1962 - PDF - Japanese - JSA
    Learn More
    €25.00

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